First principles modeling of pure black phosphorus devices under pressure

• Ximing Rong,
• Zhizhou Yu,
• Zewen Wu,
• Junjun Li,
• Bin Wang and
• Yin Wang

Beilstein J. Nanotechnol. 2019, 10, 1943–1951, doi:10.3762/bjnano.10.190

• sensors; WKB approximation; Introduction Black phosphorus (BP) has been regarded as one of the most popular two-dimensional (2D) materials due to their unique properties and potential applications in many fields of nanoelectronics [1][2][3]. So far, many studies have been carried out to explore the

• study the chirality dependence of strain-related quantum transport of BP, we propose an empirical model based on the Wentzel–Kramers–Brillouin (WKB) approximation to describe the transport through the BP device, which could serve as a simple compact model for this emerging device. In this manuscript, we

• obtained from the classical WKB approximation is provided. Finally, a conclusion of this manuscript is given. Simulation Details Figure 1a shows a schematic drawing of the proposed BP nanodevices, and Figure 1b and Figure 1c show the atomic structures of the two different pure BP nanodevices, in which

Analysis and modification of defective surface aggregates on PCDTBT:PCBM solar cell blends using combined Kelvin probe, conductive and bimodal atomic force microscopy

• Hanaul Noh,
• Alfredo J. Diaz and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 579–589, doi:10.3762/bjnano.8.62

• barrier for the metal–donor and metal–acceptor interfaces. The transmission coefficient given by the Wentzel–Kramers–Brillouin (WKB) approximation has the form: where x1 and x2 are the potential barrier boundaries, m is the mass of the charge carrier, is the reduced Planck’s constant, V(x) is the bent

Deconvolution of the density of states of tip and sample through constant-current tunneling spectroscopy

• Holger Pfeifer,
• Berndt Koslowski and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 607–617, doi:10.3762/bjnano.2.64

• -current mode (z–V spectroscopy). The scheme is based on the validity of the Wentzel–Kramers–Brillouin (WKB) approximation and the trapezoidal approximation of the electron potential within the tunneling barrier. In a numerical treatment of z–V spectroscopy, we first analyze how the position and amplitude

• one-dimensional WKB approximation. Application of the deconvolution scheme to experimental data obtained on Nb(110) reveals a convergent behavior, providing separately the DOS of both sample and tip. In detail, however, there are systematic quantitative deviations between the DOS results based on z–V

• tunneling probability from the measured quantity, assuming validity of the WKB approximation. This, however, still leaves a kind of a convolved LDOS of tip and sample [4][5][6][7][8][9][10][11][12]. Recently, it was shown that the tunneling current as described by the WKB approximation can be transformed

Terthiophene on Au(111): A scanning tunneling microscopy and spectroscopy study

• Berndt Koslowski,
• Anna Tschetschetkin,
• Norbert Maurer,
• Elena Mena-Osteritz,
• Peter Bäuerle and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 561–568, doi:10.3762/bjnano.2.60

• differential barrier height. This not so commonly determined characteristic, describing the voltage dependent tunneling barrier, has been introduced recently in order to remove features of the tunneling tip from STS spectra, assuming the validity of the Wentzel–Kramers–Brillouin (WKB) approximation. Again, 3T

• the three-dimensional WKB approximation, since, in that case, the parallel component of the energy Ep (perpendicular to the tunneling direction z) formally adds to the effective barrier (the transmission probability function changes from in one dimension to in three dimensions with E = Ez + Ep). At

• be principal limits to the WKB approximation. Conclusion Low-temperature scanning tunneling microscopy and spectroscopies (STM, STS) under ultra-high vacuum conditions were applied to investigate the structural and electronic properties of terthiophene molecules (3T) adsorbed on Au(111) in the